LEGIRLANGAN SILIKAT SHISHASIDA SIZIB O‘TISH BUSAG'ASIGA TEXNOLOGIK OMILLAR TA’SIRI
Kalit so‘zlar:
B34E shishasi, RuO₂, perkolyatsiya busag‘asi, elektr qarshilik, qalin qatlamli resistor.Annotatsiya
Ushbu maqolada B34E qo‘rg‘oshin-silikatli shisha asosidagi
RuO₂ legirlangan kompozitsion rezistorlarning elektr xossalariga texnologik
omillarning ta’siri o‘rganilgan. RuO₂ konsentratsiyasi hamda pishirish
haroratining elektr qarshilikka ta’siri eksperimental ravishda tahlil qilindi.
Tadqiqot natijalari asosida qarshilikning RuO₂ miqdori ortishi bilan
eksponentsial kamayishi hamda perkolyatsiya busag‘asi pc ≈ 7–9 massa %
oralig‘ida joylashgani aniqlandi. Shuningdek, pishirish haroratining oshishi
shisha fazasining oqishi, zarrachalararo kontakt va diffuziya jarayonlarini
yaxshilashi hisobiga elektr o‘tkazuvchanlikni sezilarli oshirishi ko‘rsatildi.
Olingan natijalar qalin qatlamli rezistorlarning elektr parametrlarini texnologik
boshqarish imkoniyatlarini kengaytiradi.
Manbalar
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